All - Apollo Semiconductor Limited

2N7002 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
ID = 115mA
RDS(ON) (at VGS = 10V) < 750mΩ
RDS(ON) (at VGS = 5V) < 750mΩ

• Package = SOT23 (TO236)

AP2300A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23 (TO236)

AP2300B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 5A
RDS(ON) (at VGS = 4.5V) < 25mΩ
RDS(ON) (at VGS = 2.5V) < 35mΩ
RDS(ON) (at VGS = 1.8V) < 55mΩ

• Package = SOT23-3

AP2301A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -20V
ID (at VGS = -4.5V) = -2.2A
RDS(ON) (at VGS = -4.5V) < 100mΩ
RDS(ON) (at VGS = -2.5V) < 150mΩ

• Package = SOT23 (TO236)

AP2301B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -20V
ID (at VGS = -4.5V) = -2.2A
RDS(ON) (at VGS = -4.5V) < 100mΩ
RDS(ON) (at VGS = -2.5V) < 150mΩ

• Package = SOT23-3

AP2302A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23 (TO236)

AP2302B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
ID (at VGS = 4.5V) = 2.8A
RDS(ON) (at VGS = 4.5V) < 85mΩ
RDS(ON) (at VGS = 2.5V) < 115mΩ

• Package = SOT23-3

AP2304A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23 (TO236)

AP2304B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 2.5A) < 117mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.0A) < 190mΩ

• Package = SOT23-3

AP2306A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23 (TO236)

AP2306B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V, ID = 3.5A) < 57mΩ
RDS(ON) (at VGS = 4.5V, ID = 2.8A) < 94mΩ

• Package = SOT23-3

AP2308A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23 (TO236)

AP2308B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 60V
RDS(ON) (at VGS = 10V, ID = 2.0A) < 160mΩ
RDS(ON) (at VGS = 4.5V, ID = 1.7A) < 220mΩ

• Package = SOT23-3

AP2310A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23 (TO236)

AP2310B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 20V
RDS(ON) (at VGS = 4.5V, ID = 6.5A) < 22mΩ
RDS(ON) (at VGS = 2.5V, ID = 5.5A) < 30mΩ

• Package = SOT23-3

AP2366A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23 (TO236)

AP2366B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = 30V
RDS(ON) (at VGS = 10V) < 36mΩ
RDS(ON) (at VGS = 4.5V) < 42mΩ

• Package = SOT23-3

AP3400A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23 (TO236)

AP3400B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 52mΩ

• Package = SOT23-3

AP3401A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ

• Package = SOT23 (TO236)

AP3401B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -4.2A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 65mΩ
RDS(ON) (at VGS = -2.5V) < 120mΩ

• Package = SOT23-3

AP3402A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23 (TO236)

AP3402B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 4.0A
RDS(ON) (at VGS = 10V) < 55mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 110mΩ

• Package = SOT23-3

AP3403A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -2.6A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ

• Package = SOT23 (TO236)

AP3403B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = -30V
ID (at VGS = -10V) = -2.6A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ

• Package = SOT23-3

AP3404A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23 (TO236)

AP3404B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 43mΩ

• Package = SOT23-3

AP3406A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23 (TO236)

AP3406B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 3.6A
RDS(ON) (at VGS = 10V) < 50mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ

• Package = SOT23-3

AP3407A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -4.1A
RDS(ON) (at VGS = -10V) < 52mΩ
RDS(ON) (at VGS = -4.5V) < 87mΩ

• Package = SOT23 (TO236)

AP3407B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -4.1A
RDS(ON) (at VGS = -10V) < 52mΩ
RDS(ON) (at VGS = -4.5V) < 87mΩ

• Package = SOT23-3

AP3409A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -2.6A
RDS(ON) (at VGS = -10V) < 130mΩ
RDS(ON) (at VGS = -4.5V) < 200mΩ

• Package = SOT23 (TO236)

AP3409B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID = -2.6A
RDS(ON) (at VGS = -10V) < 130mΩ
RDS(ON) (at VGS = -4.5V) < 200mΩ

• Package = SOT23-3

AP3410A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23 (TO236)

AP3410B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 5.8A
RDS(ON) (at VGS = 10V) < 28mΩ
RDS(ON) (at VGS = 4.5V) < 33mΩ
RDS(ON) (at VGS = 2.5V) < 42mΩ
RDS(ON) (at VGS = 1.8V) < 72mΩ

• Package = SOT23-3

AP3414A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23 (TO236)

AP3414B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 4.2A
RDS(ON) (at VGS = 4.5V) < 50mΩ
RDS(ON) (at VGS = 2.5V) < 63mΩ
RDS(ON) (at VGS = 1.8V) < 87mΩ

• Package = SOT23-3

AP3419A combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -20V
ID = -3.5A
RDS(ON) (at VGS = -10V) < 75mΩ
RDS(ON) (at VGS = -4.5V) < 95mΩ
RDS(ON) (at VGS = -2.5V) < 145mΩ

• Package = SOT23 (TO236)

AP3419B combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -20V
ID = -3.5A
RDS(ON) (at VGS = -10V) < 75mΩ
RDS(ON) (at VGS = -4.5V) < 95mΩ
RDS(ON) (at VGS = -2.5V) < 145mΩ

• Package = SOT23-3

AP4151 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON) and low gate charge. ESD Protected Gate.

• Product Summary
VDS (V) = -20V
ID (at VGS = -4.5V) = -760mA
RDS(ON) (at VGS = -4.5V) < 260mΩ
RDS(ON) (at VGS = -2.5V) < 350mΩ
RDS(ON) (at VGS = -1.8V) < 490mΩ

• Package = SOT-523

AP4402 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 20V
ID (at VGS = 4.5V) = 20A
RDS(ON) (at VGS = 4.5V) < 5.5mΩ
RDS(ON) (at VGS = 2.5V) < 7mΩ

• Package = SOP-8

AP4403 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -10V) =-6A
RDS(ON) (at VGS = -10V) < 48mΩ
RDS(ON) (at VGS = -4.5V) < 57mΩ
RDS(ON) (at VGS = -2.5V) < 80mΩ

• Package = SOP-8

AP4407 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -20V) =-12A
RDS(ON) (at VGS = -20V) < 13mΩ
RDS(ON) (at VGS = -10V) < 14mΩ
RDS(ON) (at VGS = -5V) < 30mΩ

• Package = SOP-8

AP4409 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -10V) =-15A
RDS(ON) (at VGS = -10V) < 7.5mΩ
RDS(ON) (at VGS = -4.5V) < 12mΩ

• Package = SOP-8

AP4410 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 30V
ID (at VGS = 10V) = 18A
RDS(ON) (at VGS = 10V) < 5.5mΩ
RDS(ON) (at VGS = 4.5V) < 6.2mΩ

• Package = SOP-8

AP4411 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -10V) =-8A
RDS(ON) (at VGS = -10V) < 32mΩ
RDS(ON) (at VGS = -4.5V) < 55mΩ

• Package = SOP-8

AP4435DY combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
RDS(ON) (at VGS = -10V) < 20mΩ
RDS(ON) (at VGS = -4.5V) < 35mΩ

• Package = SOP-8

AP4459 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -10V) = -6.5A
RDS(ON) (at VGS = -10V) < 46mΩ
RDS(ON) (at VGS = -4.5V) < 72mΩ

• Package = SOP-8

AP6601 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.


• Product Summary

N-Channel
VDS = 30V
ID (at VGS = 10V) = 3.4A
RDS(ON) (at VGS = 10V) < 60mΩ
RDS(ON) (at VGS = 4.5V) < 70mΩ
RDS(ON) (at VGS = 2.5V) < 90mΩ

P-Channel
VDS = -30V
ID (at VGS = -10V) = -2.3A
RDS(ON) (at VGS = -10V) < 115mΩ
RDS(ON) (at VGS = -4.5V) < 150mΩ
RDS(ON) (at VGS = -2.5V) < 200mΩ


• Package = SOT23-6 (SOT163) / TSOP6

AP6604 combines advanced MOSFET technology with a low resistance package to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, which is suitable for a wide variety of applications.


• Product Summary

N-Channel
VDS=20V
ID (at VGS = 4.5V)=3.4A
RDS(ON) (at VGS = 4.5V) < 65mΩ
RDS(ON) (at VGS = 2.5V) < 75mΩ
RDS(ON) (at VGS = 1.8V) < 100mΩ

P-Channel
VDS=-20V
ID (at VGS = -4.5V)=-2.5A
RDS(ON) (at VGS = -4.5V) < 75mΩ
RDS(ON) (at VGS = -2.5V) < 95mΩ
RDS(ON) (at VGS = -1.8V) < 115mΩ


• Package = SOT23-6 (SOT163) / TSOP6

AP8205T combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to Li-ion battery management applications.

• Product Summary
VDS = 20V
ID = 4.3A
RDS(ON) (at VGS = 4V) < 30mΩ
RDS(ON) (at VGS = 2.5V) < 46mΩ

• Package = SOT23-6 (SOT163)

AP9435DY combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS (V) = -30V
ID (at VGS = -10V) = -5.3A
RDS(ON) (at VGS = -10V) < 50mΩ
RDS(ON) (at VGS = -4.5V) < 80mΩ

• Package = SOP-8

APN2392 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or PWM applications.

• Product Summary
VDS = 100V
ID (at VGS = 10V) = 8A
RDS(ON) (at VGS = 10V) < 32mΩ
RDS(ON) (at VGS = 4.5V) < 39mΩ

• Package = DFN 2x2C

APN6512 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 150A
RDS(ON) (at VGS = 10V) < 1.7 mΩ
RDS(ON) (at VGS = 4.5V) < 2.4 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)

APN6516 combines advanced MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is most suitable to load-switch or DC/DC conversion applications.

• Product Summary
VDS = 30V
IDMAX (at VGS = 10V) = 32A
RDS(ON) (at VGS = 10V) < 5 mΩ
RDS(ON) (at VGS = 4.5V) < 8 mΩ

• Package = DFN5x6-8 (PDFNWB5x6-8L)

The DW01+ battery protection IC is designed to protect single-cell lithium-ion/polymer battery from damage or degrading due to overcharge, overdischarge, and/or overcurrent.

• Product Summary
- Ultra-low quiescent current at 3μA (Vcc=3.9V)
- Ultra-low power-down current at 0.1μA (Vcc=2.0V).
- Precision overcharge protection voltage: 4.3V ± 50mV
- Load detection function during overcharge mode
- Two detection levels for overcurrent protection
- Delay times are generated by internal circuits. No external capacitor is required.

• Package = SOT23-6 (SOT163)